Record RF performance of sub-46 nm L/sub gate/ NFETs in microprocessor SOI CMOS technologies

We report record RF FET performance in 65 and 90-nm silicon-on-insulator (SOI) CMOS technologies featuring measured gate lengths from 27 to 43 nm and analyze factors contributing to that performance. The effect of layout and geometry optimization as well as channel length scaling is investigated to improve RF performance, namely f_T, and f_MAX. A peak f_T of 330 GHz is measured in a fully-wired 65-nm NFET. A complete de-embedding method to accurately determine RF characteristics of the intrinsic 90-nm SOI NFET results in a peak f_T of 290 GHz and an f_MAX of 450 GHz