Title :
Nonlinearity and response time of 1.55 /spl mu/m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells
Author :
Akiyama, T. ; Georgiev, N. ; Mozume, T. ; Yoshida, H. ; Gopal, A.V. ; Wada, O.
Author_Institution :
The Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
Summary form only given. The demand for the optical nonlinear devices which operate around the optical communication wavelengths has been increasing because of their applicability to the time-domain switching, wavelength conversion, and regeneration. Intersubband (ISB) transition is one of the candidates for that use because it is expected to have an ultrafast response. In this paper, we evaluate the nonlinearity and the response time for the first time in 1.55 /spl mu/m ISB absorption, which was achieved by InGaAs/AlAs/AlAsSb coupled quantum wells.
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; indium compounds; optical saturable absorption; optical wavelength conversion; quantum well devices; semiconductor quantum wells; 1.55 micron; InGaAs-AlAs-AlAsSb; absorption saturation; conduction band; coupled quantum wells; intersubband absorption; intersubband transition; nonlinear absorption coefficient; optical confinement factor; optical nonlinear devices; pump-probe measurement; regeneration; response time; time-domain switching; transmissivity spectrum; ultrafast decay curve; ultrafast nonlinear devices; wavelength conversion; Communication switching; Delay; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical fiber communication; Optical wavelength conversion; Repeaters; Time domain analysis; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947408
