DocumentCode :
3441804
Title :
Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers
Author :
Iwai, T. ; Shioya, H. ; Kondo, D. ; Hirose, S. ; Kawabata, A. ; Sato, S. ; Nihei, M. ; Kikkawa, T. ; Joshin, K. ; Awano, Y. ; Yokoyama, N.
Author_Institution :
Nanotechnology Res. Center, Fujitsu Labs. Ltd., Atsugi
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
257
Lastpage :
260
Abstract :
Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 mum long CNT bumps exhibit thermal conductivity of 1400 W/m-K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at, a frequency of 2.1 GHz without any degradation due to heat-up. To our knowledge, this is the first report about, a practical application of CNTs using their high thermal conductivity
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; carbon nanotubes; gallium compounds; power amplifiers; thermal conductivity; wide band gap semiconductors; 2.1 GHz; 2.4 mm; 40 V; AlGaN-GaN; HEMT; carbon nanotubes; flip chip high power amplifiers; source bumps; thermal bumps; thermal conductivity; Aluminum gallium nitride; Carbon nanotubes; Frequency; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609322
Filename :
1609322
Link To Document :
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