Title :
A new logic family based on hybrid MOSFET-polysilicon nanowires
Author :
Ecoffey, S. ; Mazza, M. ; Pott, V. ; Bouvet, D. ; Schmid, A. ; Leblebici, Y. ; Declercq, M.J. ; Ionescu, A.M.
Author_Institution :
Inst. of Microelectron. & Microsyst., Swiss Fed. Inst. of Technol., Lausanne
Abstract :
A new logic family based on ultra-thin film (10nm) nanograins (5 to 20nm) polysilicon wires (polySiNW) is proposed, validated and studied. This logic family can be operated from 4K up to 400K and hybridized with conventional CMOS. Ultra low power dissipation in the order of hundreds of pWs has been observed, which is outperforming CMOS technology, in terms of power consumption, by orders of magnitude
Keywords :
MOSFET; logic circuits; nanowires; silicon; 4 to 400 K; 5 to 20 nm; CMOS technology; hybrid MOSFET; logic family; polysilicon nanowires; ultra thin film; CMOS logic circuits; CMOS technology; Hysteresis; Intrusion detection; MOSFET circuits; Microelectronics; Nanowires; Power dissipation; Tunneling; Wires;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609325
