DocumentCode :
3441845
Title :
A new logic family based on hybrid MOSFET-polysilicon nanowires
Author :
Ecoffey, S. ; Mazza, M. ; Pott, V. ; Bouvet, D. ; Schmid, A. ; Leblebici, Y. ; Declercq, M.J. ; Ionescu, A.M.
Author_Institution :
Inst. of Microelectron. & Microsyst., Swiss Fed. Inst. of Technol., Lausanne
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
269
Lastpage :
272
Abstract :
A new logic family based on ultra-thin film (10nm) nanograins (5 to 20nm) polysilicon wires (polySiNW) is proposed, validated and studied. This logic family can be operated from 4K up to 400K and hybridized with conventional CMOS. Ultra low power dissipation in the order of hundreds of pWs has been observed, which is outperforming CMOS technology, in terms of power consumption, by orders of magnitude
Keywords :
MOSFET; logic circuits; nanowires; silicon; 4 to 400 K; 5 to 20 nm; CMOS technology; hybrid MOSFET; logic family; polysilicon nanowires; ultra thin film; CMOS logic circuits; CMOS technology; Hysteresis; Intrusion detection; MOSFET circuits; Microelectronics; Nanowires; Power dissipation; Tunneling; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609325
Filename :
1609325
Link To Document :
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