Fabrication and opto-electric properties of silicon based heterojunction SIS cells

Author

He Bo ; Zhong Quan Ma ; Xu Jing ; Fei, Yun ; Tang Ying Hui ; Zhao Lei ; Zhang Nan Sheng ; Li Feng ; Cheng, Shen ; Shen Ling ; Meng Xia Jie ; Zhou Cheng Yue ; Yu Zheng Shan ; Yin Yan Ting

Author_Institution

Dept. of Phys., Shanghai Univ., Shanghai, China

fYear

2009

fDate

7-12 June 2009

Abstract

ITO/AZO double films were deposited by RF sputtering on p-Si texturized substrate to fabricate ITO/AZO/SiO₂/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.

Keywords

II-VI semiconductors; aluminium; indium compounds; photoelectricity; rectification; semiconductor growth; semiconductor thin films; semiconductor-insulator-semiconductor devices; semiconductor-insulator-semiconductor structures; solar cells; sputter deposition; thin film devices; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; ITO-ZnO:Al-SiO₂-Si; RF sputtering; SIS solar cells; UV-VIS spectrophotometer; double films; electrical junction properties; electrical properties; four point probe; optics properties; p-Si texturized substrate; photoelectric effect; rectifying behavior; semiconductor-insulator-semiconductor heterojunction; structural properties; Electric variables measurement; Heterojunctions; Indium tin oxide; Nonlinear optics; Optical device fabrication; Optical films; Probes; Radio frequency; Silicon; Sputtering; Al-doped ZnO (AZO); ITO; SIS heterojunction; Sputtering; current-voltage (I–V) characteristics;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411303

Filename

5411303