DocumentCode
3441968
Title
The development of planar Schottky diode waveguide mixers at submillimeter wavelengths
Author
Hesler, J.L. ; Crowe, T.W. ; Bishop, W.L. ; Weikle, R.M. ; Bradley, R.F. ; Shing-Kuo Pan
Author_Institution
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
953
Abstract
This paper reports on progress towards state-of-the-art submillimeter wavelength waveguide mixers using planar Schottky barrier diodes. A double-sideband system noise temperature of 2380 K was measured at 585 GHz with 1.2 mW of local oscillator power using a fixed tuned mixer in which the diode is mounted in a microstrip channel. A system noise temperature of 2550 K was measured with 1.1 mW of LO power using a mixer in which the diode was mounted in a waveguide in front of a tunable backshort. These represent the best planar diode mixer results in this frequency range. Simulations indicate an IF bandwidth in excess of 100% and an RF bandwidth of 40% are achievable using the fixed tuned mixer block design.
Keywords
Schottky diode mixers; circuit tuning; microstrip circuits; submillimetre wave mixers; 1.1 mW; 1.2 mW; 585 GHz; IF bandwidth; LO power; RF bandwidth; Schottky diode waveguide mixers; double-sideband system; fixed tuned mixer; local oscillator power; microstrip channel; noise temperature; planar Schottky diode; submillimeter wavelengths; tunable backshort; Acoustical engineering; Bandwidth; Local oscillators; Noise measurement; Planar waveguides; Power measurement; Schottky barriers; Schottky diodes; Temperature; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602958
Filename
602958
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