GaN on patterned silicon (GPS) technique for GaN-based integrated microsensors

We demonstrated a viable technology for GaN-based integrated microsensors using the suspended GaN microstructures fabricated with GaN on patterned silicon technique. Fundamental characteristics of the GPS technique are investigated. Active devices (HEMT) were fabricated on the AlGaN/GaN cantilevers and qualitatively tested. The experiment shows that the HEMTs on cantilevers can effectively sense the change in the stress induced by deflections applied to the cantilevers