High power 1120 nm-diode lasers with highly strained InGaAs QWs

Author

Bugge, F. ; Erbert, G. ; Hulsewede, R. ; Ressel, P. ; Staske, R. ; Wenzel, H. ; Weyers, M. ; Zeimer, U. ; Trankle, G.

Author_Institution

Ferdinand-Braun-Inst., Berlin, Germany

fYear

2001

fDate

11-11 May 2001

Firstpage

33

Abstract

Summary form only given. Diode lasers in the wavelength range at and beyond 1100 nm are interesting for pumping up-conversion fiber lasers and as sources for Raman amplifiers in telecommunication. There are several approaches to realize such diode lasers on GaAs. At wavelengths above 1200 nm InGaAs Q-dots and GaInNAs QW have achieved results which are comparable or better than InP-based devices. However below 1200 nm highly strained InGaAs seems to be the best approach.We studied diode lasers with a structure based on a GaAs waveguide and an AlGaAs (x = 0.25) waveguide grown by MOVPE. We have demonstrated record-high output powers for diode lasers in the wavelength range at 1120 nm with excellent wall plug efficiencies and high temperature stability.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser stability; quantum well lasers; waveguide lasers; 1120 nm; InGaAs; MOVPE; confinement factor; high modal gain coefficient; high power diode lasers; high temperature stability; highly strained QW; slope efficiency; strain-compensating barrier layers; very low transparency current density; wall plug efficiencies; Diode lasers; Epitaxial growth; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical fiber devices; Power lasers; Pump lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947427

Filename

947427