Comparison between the evanescent model, the polynomial model and the polynomial including effective conducting path effect (ECPE)

Author

Bouziane, A. ; Aouaj, A. ; Nouacry, A.

Author_Institution

Dept. de Genie Electr., Univ. Sultan Moulay Slimane, Beni-Mellal, Morocco

fYear

2009

fDate

2-4 April 2009

Firstpage

313

Lastpage

316

Abstract

We present a comparative study of submicronic MOSFET characteristics using analytic models of electrostatic potential in the channel. We are particularly interested in the surface potential, threshold voltage, swing and DIBL using the polynomial model with and without ECPE and the evanescent model to analytically express the electrostatic potential. The results show a good agreement between the polynomial model including ECPE, the evanescent model and measures done by simulation tools.

Keywords

MOSFET; electric admittance; electrostatic devices; surface potential; threshold logic; DIBL; effective conducting path effect; electrostatic potential; evanescent model; polynomial model; submicronic MOSFET; surface potential; threshold voltage; CMOS technology; Electrostatic analysis; Electrostatic measurements; MOSFET circuits; Poisson equations; Polynomials; Semiconductor device modeling; Silicon; Threshold voltage; Very large scale integration; DIBL and Swing; effective conducting path effect; evanescent model; submicronic MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Computing and Systems, 2009. ICMCS '09. International Conference on

Conference_Location

Ouarzazate

Print_ISBN

978-1-4244-3756-6

Electronic_ISBN

978-1-4244-3757-3

Type

conf

DOI

10.1109/MMCS.2009.5256680

Filename

5256680