Title :
A novel p-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (> 20 MB/sec)
Author :
Lue, Hang-Ting ; Wang, Szu-Yu ; Lai, Erh-Kun ; Wu, Min-Ta ; Yang, Ling-Wu ; Chen, Kuang-Chao ; Ku, Joseph ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu
Abstract :
A novel p-channel NAND-type non-volatile flash memory using nitride-trapping device is presented. The p-channel device is programmed by very efficient band-to-band tunneling hot electron (BBHE), and erased by self-converging channel hole tunneling. An ultra-thin bandgap engineered ONO tunneling dielectric as presented in H. T. Lue et al. (2005) is adopted to achieve efficient hole-tunneling erase at high electric field, but yet good data retention at low field. The operation of physically 2-bit/cell NAND-type architecture with depletion mode device (VT > 0) is illustrated. Excellent P/E cycling endurance, data retention and read disturb immunity are demonstrated. This new non-volatile p-channel memory device is capable of very high-programming throughput (> 20 MB/sec) suitable for data Flash application
Keywords :
NAND circuits; flash memories; hot carriers; tunnelling; 2 bit; NAND-type flash; ONO tunneling dielectric; band-to-band tunneling hot electron; hole-tunneling erase; nitride-trapping device; nonvolatile flash memory; p-channel device; read disturb immunity; self-converging channel; ultra-thin bandgap; Charge carrier processes; Data engineering; Dielectrics; Electronic mail; Flash memory; Nonvolatile memory; Photonic band gap; Throughput; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609342
