Probing electronic structure of Si-SiO/sub 2/ multiple quantum wells by second-harmonic spectroscopy

Author

Dolgova, T.V. ; Fedyanin, A.A. ; Aktsipetrov, O.A. ; Schuhmacher, D. ; Marowsky, G. ; Pudonin, A.F.

Author_Institution

Dept. of Phys., Moscow State Univ., Russia

fYear

2001

fDate

11-11 May 2001

Firstpage

39

Abstract

Summary form only given. The size effects in nonlinear optical response of amorphous Si-SO/sub 2/ MQW are studied by second-harmonic generation (SHG) spectroscopy. The sensitivity of the SHG spectroscopy to electronic structure (subband energy position and density of states lineshapes) of MQW down to sub-nanoscale of the well thicknesses is demonstrated.

Keywords

electronic density of states; optical harmonic generation; semiconductor quantum wells; silicon; silicon compounds; spectral line breadth; two-photon spectroscopy; SHG spectroscopy; Si-SO/sub 2/; Si-SiO/sub 2/ multiple quantum wells; amorphous Si-SO/sub 2/ MQW; density of states lineshapes; electronic structure; nonlinear optical response; second-harmonic generation; second-harmonic spectroscopy; size effects; sub-nanoscale; subband energy position; well thicknesses; Amorphous materials; Crystalline materials; Crystallization; Electrons; Laser tuning; Photonic band gap; Physics; Quantum well devices; Resonance; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947434

Filename

947434