Coupled localized and distributed elements analysis applying an electromagnetic software in the frequency domain

Author

Baillargeat, D. ; Larique, E. ; Verdeyme, S. ; Aubourg, M. ; Sommet, R. ; Guillon, P.

Author_Institution

Fac. des Sci., I.R.C.O.M.-UMR CNRS, Limoges, France

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

1021

Abstract

A coupled localized and distributed elements analysis applying the F.E.M. in the frequency domain is described. First, two studies concerning a two port network and a gunn diode amplifier, are performed to prove with success the efficiency of our method. Then the main objective of this paper is to present an electromagnetic analysis of the passive area of a transistor (FET) taking into account all its physical and geometrical characteristics. Theoretical and experimental results are compared and they show encouraging agreement.

Keywords

Gunn devices; distributed parameter networks; finite element analysis; frequency-domain analysis; lumped parameter networks; microwave amplifiers; microwave field effect transistors; network analysis; two-port networks; FEM; Gunn diode amplifier; coupled analysis; distributed element; electromagnetic software; field effect transistor; frequency domain; localized element; two port network; Circuits; Electromagnetic analysis; Electromagnetic coupling; Electromagnetic devices; Electromagnetic fields; Electromagnetic modeling; Electromagnetic scattering; Frequency domain analysis; Microwave FETs; Numerical analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602975

Filename

602975