High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure

Author

Kondo, M. ; Sugii, N. ; Hoshino, Y. ; Hirasawa, W. ; Kimura, Y. ; Miyamoto, M. ; Fujioka, T. ; Kamohara, S. ; Kondo, Y. ; Kimura, S. ; Yoshida, I.

Author_Institution

Adv. Analog Technol. Div., Renesas Technol. Corp., Gunma

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

365

Lastpage

368

Abstract

We applied a strained-Si/relaxed-SiGe structure to LDMOSFETs in order to improve the power-added efficiency (PAE) of cellular handset RF power amplifier applications. Our LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed Si_0.85Ge_0.15 structure. Despite of appearance of misfit dislocations, the thick strained-Si was essential for the high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using a dynamic thermal simulation. The devices exhibited 46.7%-PAE at 27.5 dBm-P_out for WCDMA a handset application, which was improved by 4.0 point over Si controls

Keywords

Ge-Si alloys; UHF power amplifiers; cellular radio; code division multiple access; dislocations; mobile handsets; power MOSFET; 70 nm; RF power amplifier; Si-SiGe; WCDMA; cellular handsets; dynamic thermal simulation; misfit dislocations; power RF LDMOSFET; self-heating effects; Electron mobility; Germanium silicon alloys; Laboratories; Radio frequency; Silicon germanium; Strain control; Telephone sets; Thermal conductivity; Thickness control; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609352

Filename

1609352