DocumentCode
3442628
Title
Theory of hydrogen-related levels in semiconductors and oxides
Author
Van de Walle, Chris G.
Author_Institution
Dept. of Mater., California Univ., Santa Barbara, CA
fYear
2005
fDate
5-5 Dec. 2005
Lastpage
403
Abstract
Hydrogen plays a major role in the electronic properties of semiconductors, oxides, and their interfaces. This paper reviews the present understanding of hydrogen interactions with materials, based on first-principles calculations, and describes how a relatively simple model allows predicting the electronic behavior of hydrogen in a wide range of semiconductors and oxides. Specific predictions are discussed for novel channel materials and gate oxides
Keywords
doping profiles; electric properties; hydrogen; interface phenomena; semiconductor materials; channel materials; electronic properties; gate oxides; hydrogen interactions; interfaces; semiconductors; Bonding; Electrons; Elementary particle vacuum; Hydrogen; Impurities; Predictive models; Reservoirs; Semiconductor devices; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location
Washington, DC
Print_ISBN
0-7803-9268-X
Type
conf
DOI
10.1109/IEDM.2005.1609362
Filename
1609362
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