• DocumentCode
    3442733
  • Title

    Experimental clarification of mobility determining factors in HfSiON CMISFET with various film compositions

  • Author

    Iijima, Ryosuke ; Takayanagi, Mariko ; Yamaguchi, Takeshi ; Koyama, Masato ; Nishiyama, Akira

  • Author_Institution
    Corporate Res. & Dev. Center, Toshiba Corp., Yokohama
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    421
  • Lastpage
    424
  • Abstract
    Dominant scattering mechanisms for both electrons and holes in HfSiON MISFET were examined systematically by using the newly developed pulse measurement technique. Mobility determining factors for electrons and holes in various effective field (Eeff) regions were identified. In addition, the influence of two elements of Hf and N on the mobility in the operational Eeff region was investigated and guidelines for improving performance of HfSiON-CMOS devices were presented
  • Keywords
    MISFET; electron mobility; hafnium compounds; hole mobility; CMOS devices; HfSiON; MISFET; electron scattering; film compositions; hole scattering; mobility determining factors; pulse measurement technique; scattering mechanisms; Capacitance-voltage characteristics; Charge carrier processes; Degradation; Dielectrics; Electron mobility; Hafnium; MISFETs; Pulse measurements; Scattering; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609368
  • Filename
    1609368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3442733