• DocumentCode
    3442816
  • Title

    Ultra-thin (EOT=3/spl Aring/) and low leakage dielectrics of La-alminate directly on si substrate fabricated by high temperature deposition

  • Author

    Suzuki, Masamichi ; Tomita, Mitsuhiro ; Yamaguchi, Takeshi ; Fukushima, Noburu

  • Author_Institution
    Corporate Res. & Dev. Center, Toshiba Corp., Kawasaki
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    Ultra-thin (0.31 nm) LaAlO3 gate dielectrics with excellent electrical characteristics were fabricated by a novel high temperature deposition process. The key to achieve it is to form stable La-O-Al bonds in as-deposited phase by high temperature deposition. That process suppresses the oxygen exchange for the diffusion and the resultant interface layer formation
  • Keywords
    MISFET; carrier mobility; dielectric thin films; interface states; lanthanum compounds; leakage currents; silicon; sputtered coatings; 0.31 nm; LaAlO3; diffusion; electrical characteristics; high temperature deposition process; interface layer formation; laminates; low leakage dielectrics; oxygen exchange; substrates; ultra-thin dielectrics; Annealing; Capacitance; Capacitors; Dielectric substrates; Electric variables; Laboratories; Large scale integration; Leakage current; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609371
  • Filename
    1609371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3442816