Title :
Materials and patterning techniques for macroelectronics
Author :
Sun, Yugang ; Mack, Shawn ; Meitl, Matthew ; Rogers, John A.
Author_Institution :
Dept. of Mater. Sci. & Eng., Illinois Univ., Urbana-Champaign, IL
Abstract :
Flexible thin film transistors (TFTs) with high performance can be fabricated by using printable arrays of microstructured Si ribbons or GaAs wires (mus-Si or mus-GaAs) generated from high-quality, single-crystal, bulk wafers. The resulting Si-based MOSFETs and GaAs-based MESFETs on thin plastic substrates exhibit excellent electrical and mechanical (i.e. bending) properties. The combined use of these materials and printing techniques may advance the development of practical technologies for emerging applications of lightweight, flexible ´macroelectronic´ systems in consumer, space, and military applications
Keywords :
III-V semiconductors; MOSFET; Schottky gate field effect transistors; elemental semiconductors; flexible electronics; gallium compounds; silicon; thin film transistors; GaAs; MESFET; MOSFET; Si; electrical property; flexible macroelectronic systems; mechanical property; patterning techniques; printable arrays; printing techniques; thin film transistors; thin plastic substrates; Gallium arsenide; MESFETs; MOSFETs; Mechanical factors; Plastics; Printing; Space technology; Substrates; Thin film transistors; Wires;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609377