New stress inducing technique of epitaxial si on recessed S/D fabricated in substrate strained-si of [100]channel on rotated wafers

Author

Sanuki, T. ; Tanaka, H. ; Oota, K. ; Fujii, O. ; Yamaguchi, R. ; Nakayama, K. ; Morimasa, Y. ; Takasu, Y. ; Idebuchi, J. ; Nishiyama, N. ; Fukui, H. ; Yoshimura, H. ; Matsuo, K. ; Mizushima, I. ; Ito, H. ; Takegawa, Y. ; Saito, M. ; Iwai, M. ; Nagashima,

Author_Institution

Semicond. Co., Toshiba Corp., Yokohama

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

501

Lastpage

504

Abstract

For the first time, a novel CMOSFET structure in substrate strained-Si of lang100rang-channel on rotated wafers is presented. Low Ge concentration (10%) of SiGe layer is used in order to suppress the Vth shift and the mobility reduction caused by high channel doping. We applied Si selective epitaxial growth on recessed S/D region in SiGe layer, which is effective to induce high tensile stress and reduce S/D resistance. In strained Si NMOS, 15% performance improvement is achieved. Moreover, additive stress by using tensile CESL can further improve the drive current. In strained Si PMOS, 25% performance improvement is achieved in both narrow and wide channel device

Keywords

Ge-Si alloys; MOSFET; epitaxial growth; semiconductor doping; semiconductor materials; stress effects; CMOSFET structure; SiGe; additive stress; epitaxial Si; high channel doping; recessed source-drain; rotated wafers; selective epitaxial growth; strained PMOS; stress inducing technique; substrate strained silicon; threshold voltage shift suppression; CMOSFETs; Degradation; Doping; Germanium silicon alloys; MOS devices; MOSFET circuits; Manufacturing processes; Silicon germanium; Substrates; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609391

Filename

1609391