Integrated CMOS power amplifier and down-converter for 2.4 GHz Bluetooth applications

Author

Hsiao, Chao-Chih ; Kuo, Chin-Wei ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

fYear

2001

fDate

2001

Firstpage

29

Lastpage

32

Abstract

This report presents a 2.4 GHz microwave power amplifier and down-converter, which were fabricated by a standard 0.35 μm 1P4M CMOS process technology. The CMOS power amplifier delivered a 17.5 dBm output power at 2.4 GHz operation, with a maximum power added efficiency of 16%. A CMOS integrated down-converter, including an oscillator and a double-balanced mixer in the 24 GHz band, was also introduced. The oscillator´s working frequency is 2.36 GHz with a -3 dBm power level. The measured conversion gain and port-to-port isolation of this double-balanced mixer, were -3 dB and 25 dB, respectively

Keywords

CMOS integrated circuits; MMIC frequency convertors; MMIC mixers; MMIC oscillators; MMIC power amplifiers; -3 dB; 0.35 micron; 16 percent; 2.36 GHz; 2.4 GHz; Bluetooth applications; CMOS integrated down-converter; CMOS power amplifier; IP4M CMOS process technology; double-balanced mixer; maximum power added efficiency; measured conversion gain; microwave down-converter; oscillator; output power; port-to-port isolation; two-stage microwave power amplifier; CMOS process; CMOS technology; Frequency; Microwave amplifiers; Microwave oscillators; Microwave technology; Mixers; Operational amplifiers; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2001. RAWCON 2001. IEEE

Conference_Location

Waltham, MA

Print_ISBN

0-7803-7189-5

Type

conf

DOI

10.1109/RAWCON.2001.947492

Filename

947492