Computational study of carbon nanotube p-i-n tunnel FETs

Author

Koswatta, Siyuranga O. ; Nikonov, Dmitri E. ; Lundstrom, Mark S.

Author_Institution

Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

518

Lastpage

521

Abstract

Reducing transistor leakage current by increasing the sub-threshold slope beyond the thermal limit (60mV/decade at room temperature) could alleviate the heat dissipation requirements of high-density ICs. This paper examines the potential of a carbon nanotube p-i-n tunnel FET for less than 60mV/dec operation. Both ballistic transport and transport with inelastic scattering are considered. The device performance is compared to that of a carbon nanotube n-i-n MOSFET. An extensive discussion on device optimization for p-i-n tunnel FETs is also presented

Keywords

ballistic transport; field effect transistors; nanotube devices; tunnelling; ballistic transport; carbon nanotube; device optimization; heat dissipation alleviation; high-density integrated circuit; inelastic scattering; p-i-n tunnel FET; transistor leakage current reduction; Carbon nanotubes; Computer aided manufacturing; FETs; III-V semiconductor materials; Optical scattering; PIN photodiodes; Particle scattering; Phonons; Resonance light scattering; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609396

Filename

1609396