Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

Author

Bescond, M. ; Cavassilas, N. ; Kalna, K. ; Nehari, K. ; Raymond, L. ; Autran, J.L. ; Lannoo, M. ; Asenov, A.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ.

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

526

Lastpage

529

Abstract

The influence of various channel materials and crystallographic orientations on the performance of nanowire MOSFETs operating in pure ballistic regime is investigated using 3D quantum-mechanical simulations. We consider three different materials (Si, Ge, GaAs) in nanowire transistors fabricated on a <010>-wafer with an arbitrary channel orientation and provide a better understanding of the transport phenomena that may occur in each device configuration

Keywords

III-V semiconductors; MOSFET; ballistic transport; nanowires; semiconductor device models; 3D quantum-mechanical simulation; GaAs; Ge; Si; ballistic transport; channel materials; channel orientation; crystallographic orientations; nanowire MOSFET; nanowire transistors; transport phenomena; Ballistic transport; Crystalline materials; Crystallography; Effective mass; Electrodes; Gallium arsenide; MOSFETs; Nanoscale devices; Nanostructured materials; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609398

Filename

1609398

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3443322