Title :
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Author :
Bescond, M. ; Cavassilas, N. ; Kalna, K. ; Nehari, K. ; Raymond, L. ; Autran, J.L. ; Lannoo, M. ; Asenov, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Abstract :
The influence of various channel materials and crystallographic orientations on the performance of nanowire MOSFETs operating in pure ballistic regime is investigated using 3D quantum-mechanical simulations. We consider three different materials (Si, Ge, GaAs) in nanowire transistors fabricated on a <010>-wafer with an arbitrary channel orientation and provide a better understanding of the transport phenomena that may occur in each device configuration
Keywords :
III-V semiconductors; MOSFET; ballistic transport; nanowires; semiconductor device models; 3D quantum-mechanical simulation; GaAs; Ge; Si; ballistic transport; channel materials; channel orientation; crystallographic orientations; nanowire MOSFET; nanowire transistors; transport phenomena; Ballistic transport; Crystalline materials; Crystallography; Effective mass; Electrodes; Gallium arsenide; MOSFETs; Nanoscale devices; Nanostructured materials; Wave functions;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609398
