Reduction in the operating current of high-power 660-nm AlGaInP laser diodes with an AlInP current blocking layer

Author

Hiroyama, R. ; Inoue, D. ; Nomura, Y. ; Shono, M. ; Sawada, M.

Author_Institution

Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan

fYear

2001

fDate

11-11 May 2001

Firstpage

83

Abstract

Summary form only given. High-power 660-nm AlGaInP laser diodes with a stable transverse mode are indispensable as the light source of recordable or rewritable DVD systems. The window-mirror structure is effective for obtaining a high COD (catastrophic optical damage) level. We report on high-power 660 nm AlGaInP laser diodes with Zn-diffused window-mirrors and an AlInP current blocking layer. These laser diodes have demonstrated stable operation with the highest light output power to our knowledge of 80 mW for the real index guide structure.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser mirrors; laser modes; laser transitions; optical windows; quantum well lasers; waveguide lasers; 660 nm; 80 mW; AlGaInP; AlInP; AlInP current blocking layer; GaInP:Zn-AlGaInP:Zn; Zn-diffused window-mirrors; high catastrophic optical damage level; high-power 660-nm AlGaInP laser diodes; light output power; light source; operating current; real index guide structure; recordable DVD systems; rewritable DVD systems; stable operation; stable transverse mode; window-mirror structure; DVD; Diode lasers; Frequency; Gallium arsenide; Life testing; Optical recording; Optical refraction; Power generation; Quantum well lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947503

Filename

947503