Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability

Author

Ando, Yuji ; Wakejima, Akio ; Okamoto, Yasuhiro ; Nakayama, Tatsuo ; Ota, Kazuki ; Yamanoguchi, Katsumi ; Murase, Yasuhiro ; Kasahara, Kensuke ; Matsunaga, Kohji ; Inoue, Takashi ; Miyamoto, Hironobu

Author_Institution

R&D Assoc. for Future Electron Devices, NEC Corp., Otsu

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

576

Lastpage

579

Abstract

We have successfully developed a novel AlGaN/GaN FET with dual field-modulating-plates (FPs). The breakdown voltage is enhanced from 125 to 250 V by adding the second FP to the conventional FP structure. Benefiting from the first FP, no current collapse is observed simultaneously. Since the second FP effectively reduces feedback capacitance, this device provides a 3-dB higher gain along with increased linearity and stability. Under a 2.15-GHz W-CDMA modulation scheme, a dual-FP-FET with a 24-mm gate periphery achieved a state-of-the-art combination of 160-W output power and a 17.5-dB linear gain

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; code division multiple access; gallium compounds; semiconductor device breakdown; 125 to 250 V; 160 W; 17.5 dB; 2.15 GHz; 24 mm; 3 dB; AlGaN-GaN; FP structure; W-CDMA modulation scheme; breakdown voltage; dual-FP-FET; dual-field-plate FET; feedback capacitance; field-modulating-plates; Aluminum gallium nitride; Capacitance; FETs; Feedback; Gain; Gallium nitride; Linearity; Multiaccess communication; Power generation; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609412

Filename

1609412