Simulating III–V concentrator solar cells: A comparison of advantages and limitations of lumped analytical models; distributed analytical models and numerical simulation

Author

Rey-Stolle, Ignacio ; Algora, Carlos ; Garcia, Iván ; Baudrit, Mathieu ; Espinet, Pilar ; Galiana, Beatriz ; Barrigón, Enrique

Author_Institution

Inst. de Energia Solar, Univ. Politec. de Madrid, Madrid, Spain

fYear

2009

fDate

7-12 June 2009

Abstract

The simulation of the quantum efficiency and the I-V curves at several concentrations of a high efficiency concentrator dual-junction solar cell is presented using three different approaches: 1) analytic simulation with the one-diode model; 2) analytic simulation with distributed circuit models; and, 3) numerical simulation. The main advantages and limitations of each model are discussed and their performance is compared.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; solar cells; GaInP-GaAs; III-V concentrator solar cells; distributed analytical models; high efficiency concentrator dual-junction solar cell; lumped analytical models; numerical simulation; one-diode model; quantum efficiency; Analytical models; Circuit simulation; Equivalent circuits; III-V semiconductor materials; Numerical simulation; Photovoltaic cells; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411395

Filename

5411395