Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference

Author

Yua, D.S. ; Chin, Albert ; Wu, C.H. ; Li, M.-F. ; Zhu, C. ; Wang, S.J. ; Yoo, W.J. ; Hung, B.F. ; McAlister, S.P.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

634

Lastpage

637

Abstract

Metallic diffusion through high-K HfO₂, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phi_m,eff) of 4.25 and 5.15 eV are obtained in TaTb_0.2N/HflON and Ir/HfAlON at 1.7 nm EOT. Good dual phi_m,eff of 4.15 and 4.9 eV are also obtained in Yb_xSi/HfAlON and Ir_xSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature

Keywords

aluminium compounds; hafnium compounds; high-k dielectric thin films; iridium compounds; lanthanum; surface diffusion; tantalum compounds; work function; ytterbium compounds; 4.25 eV; 4.9 eV; 5.15 eV; CMOS; HfO₂; Ir-based dual metal-gate; Ir_xSi-HfAlON FUSI gates; IrSi-HfAlON; La; TaTb_0.2N-HfAlON; Yb_xSi-HfAlON FUSI gates; YbSi-HfAlON; high temperature decomposition; high-k dielectric films; lanthanide based dual metal-gate; large work-function difference; metal-nitride decomposition; metallic diffusion; Bonding; CMOS technology; Councils; Electrodes; Hafnium oxide; Implants; Leakage current; MOS capacitors; MOS devices; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609430

Filename

1609430