Demonstration of Ni fully germanosilicide as a pFET gate electrode candidate on HfSiON

Author

Yu, H.Y. ; Singanamalla, R. ; Opsomer, K. ; Augendre, E. ; Simoen, E. ; Kittl, J.A. ; Kubicek, S. ; Severi, S. ; Shi, X.P. ; Brus, S. ; Zhao, C. ; De Marneffe, J.F. ; Locorotondo, S. ; Shamiryan, D. ; Van Dal, M. ; Veloso, A. ; Lauwers, A. ; Niwa, M. ; Ma

Author_Institution

IMEC, Leuven

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

638

Lastpage

641

Abstract

We report for the first time on the use of a Ni fully germano-silicide (FUGESI) as a metal gate in pFETs. Using HfSiON dielectrics and comparing to Ni FUSI devices, we demonstrate that the addition of Ge in poly-Si gate results in 1) Fermi-level unpinning with >200 mV increase in work function; 2) improved dielectrics integrity: such as decreased 1/f and generation-recombination noise, improved channel interface, reduced gate leakage, and superior NBTI characteristics. The above experimental observations are correlated to oxygen vacancies related defects in the HfSiON layer

Keywords

1/f noise; Fermi level; Ge-Si alloys; dielectric materials; field effect transistors; hafnium compounds; semiconductor materials; silicon compounds; 1/f noise; FUGESI metal gate; Fermi-level unpinning; GeSi; HfSiON; Ni fully germano silicide gate; dielectric materials; dielectrics integrity; generation-recombination noise; pFET gate electrode; poly-Si gate results; Character generation; Dielectric devices; Electrodes; Gate leakage; Germanium silicon alloys; Hafnium; Instruments; MOSFETs; Noise reduction; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609431

Filename

1609431