Transient response of CdS/CdTe cells with heavy doping of Si, P and Cu

We have studied magnetron sputtered CdS/CdTe cells having CdTe or CdS intentionally doped with either Si, P or Cu. This study was done to understand the effects of doping on the transient behavior and J-V performance of CdTe cells. Different chemical group elements were selected to see their comparative effects on cell response. In comparison with undoped CdTe, the cells with Si or P doping show enhanced transient effects. Although cells with pure CdS/CdTe show a slight increase in current with time during AM1.5 exposure, the doped CdTe cells exhibit short-circuit current decay or recovery with time. This device behavior will be related to the properties of the CdTe:P, CdS:Si and CdTe:Si. We found that doping of Cu in CdTe is strongly detrimental to cell performance compared to about same amount of doping (~1%) with Si and P..