High density and high speed SRAM bit-cells and ring oscillators due to laser annealing for 45nm bulk CMOS

Author

Pouydebasque, A. ; Dumont, B. ; Denorme, S. ; Wacquant, F. ; Bidaud, M. ; Laviron, C. ; Halimaoui, A. ; Chaton, C. ; Chapon, J.D. ; Gouraud, P. ; Leverd, F. ; Bernard, H. ; Warrick, S. ; Delille, D. ; Romanjek, K. ; Gwoziecki, R. ; Planes, N. ; Vadot, S.

Author_Institution

Philips Semicond., Crolles

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

663

Lastpage

666

Abstract

In this work, we report on the integration of 30nm gate length CMOS devices fabricated using laser spike annealing (LSA). Considerably improved short channel effects and drive current (+10% I_on at constant I_off for NMOS) are demonstrated on samples using LSA. Excellent I_onI_off characteristics (I_on = 940 muA/mum I_off = 200 muA/mum for NMOS and I_on = 390muA/mum I_off = 50 nA/mum for PMOS at V_dd = 1 V) are measured that are at the leading edge of the state of the art. Moreover, an enhanced dynamic behavior (-6% in ring oscillator delay) and improved characteristics of high density SRAM bit-cells (+24% I_cell for the same 1_sb) are reported. These results demonstrate the potential of LSA in the perspective of 30 nm device integration of a 45 nm bulk CMOS platform

Keywords

CMOS memory circuits; SRAM chips; high-speed integrated circuits; laser beam annealing; 30 nm; 45 nm; LSA; NMOS; bulk CMOS devices; bulk CMOS platform; enhanced dynamic behavior; high density SRAM bit-cells; high speed SRAM bit-cells; laser annealing; laser spike annealing; ring oscillators; Annealing; Circuits; Delay; Fabrication; MOS devices; Random access memory; Ring lasers; Ring oscillators; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609438

Filename

1609438