Author :
Pouydebasque, A. ; Dumont, B. ; Denorme, S. ; Wacquant, F. ; Bidaud, M. ; Laviron, C. ; Halimaoui, A. ; Chaton, C. ; Chapon, J.D. ; Gouraud, P. ; Leverd, F. ; Bernard, H. ; Warrick, S. ; Delille, D. ; Romanjek, K. ; Gwoziecki, R. ; Planes, N. ; Vadot, S.
Abstract :
In this work, we report on the integration of 30nm gate length CMOS devices fabricated using laser spike annealing (LSA). Considerably improved short channel effects and drive current (+10% Ion at constant Ioff for NMOS) are demonstrated on samples using LSA. Excellent IonIoff characteristics (Ion = 940 muA/mum Ioff = 200 muA/mum for NMOS and Ion = 390muA/mum Ioff = 50 nA/mum for PMOS at Vdd = 1 V) are measured that are at the leading edge of the state of the art. Moreover, an enhanced dynamic behavior (-6% in ring oscillator delay) and improved characteristics of high density SRAM bit-cells (+24% Icell for the same 1sb) are reported. These results demonstrate the potential of LSA in the perspective of 30 nm device integration of a 45 nm bulk CMOS platform
Keywords :
CMOS memory circuits; SRAM chips; high-speed integrated circuits; laser beam annealing; 30 nm; 45 nm; LSA; NMOS; bulk CMOS devices; bulk CMOS platform; enhanced dynamic behavior; high density SRAM bit-cells; high speed SRAM bit-cells; laser annealing; laser spike annealing; ring oscillators; Annealing; Circuits; Delay; Fabrication; MOS devices; Random access memory; Ring lasers; Ring oscillators; Semiconductor lasers; Temperature;
