DocumentCode :
3444132
Title :
Fabrication schemes for advanced solar cell architectures combining upright silicon nanowires and thin films
Author :
Sadeghimakki, Bahareh ; Tarighat, Roohollah Samadzadeh ; Sivoththaman, Siva
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear :
2009
fDate :
7-12 June 2009
Abstract :
Radial pn junction wire array solar cells have a potential to reduce the material cost of PV devices. We present the fabrication process of Si nano-wire array solar cells using low temperature plasma processing techniques. Process schemes for fabrication of two new types of solar cells with radial p-n junction formed with low temperature thin film deposition process are described. In addition to the experimental process development, theoretical analyses of doping concentration of both p- and n-type regions as well as applied voltage on electric properties of the wires are also performed.
Keywords :
doping profiles; elemental semiconductors; nanofabrication; nanowires; p-n junctions; plasma CVD; semiconductor doping; semiconductor quantum wires; semiconductor thin films; silicon; solar cell arrays; thin film devices; PECVD; Si; advanced solar cell architectures; applied voltage; doping concentration; n-type dopant; p-type dopant; plasma processing; radial p-n junction wire array solar cells; silicon nanowires; thin film deposition process; wire electric property; Costs; Fabrication; Nanowires; Photovoltaic cells; Plasma devices; Plasma materials processing; Plasma temperature; Semiconductor thin films; Silicon; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411417
Filename :
5411417
Link To Document :
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