• DocumentCode
    3444213
  • Title

    On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

  • Author

    Varghese, D. ; Saha, D. ; Mahapatra, S. ; Ahmed, K. ; Nouri, F. ; Alam, M.

  • Author_Institution
    Dept. of Electr. Eng., IIT Bombay, Mumbai
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    684
  • Lastpage
    687
  • Abstract
    Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation
  • Keywords
    MOSFET; hole traps; interface states; semiconductor device reliability; thermal stability; Arrhenius temperature activation; DPN; NBTI; decoupled plasma nitrided; gate oxides; hole trapping; interface trap generation; negative bias temperature instability; p-MOSFET; time evolution; Dispersion; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Plasma measurements; Plasma temperature; Temperature dependence; Threshold voltage; Time measurement; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609444
  • Filename
    1609444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3444213