Title :
High-speed modulation of single-mode and multi-mode 850 nm, intra-cavity contacted, shallow implant-apertured, vertical-cavity surface-emitting lasers
Author :
Dang, G. ; Hobson, W.S. ; Chirovsky, L.M.F. ; Lopata, J. ; Tayahi, M. ; Chu, S.N.G. ; Ren, F. ; Pearton, S.J.
Author_Institution :
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Summary form only given. GaAs/AlGaAs quantum well, 850 nm vertical-cavity surface-emitting lasers (VCSELs) with lateral current injection and shallow implanted apertures were fabricated. The device performance was characterized using small-signal and large-signal analysis, power-current-voltage measurements, and optical spectra measurements.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; high-speed optical techniques; laser beams; laser cavity resonators; laser modes; laser variables measurement; optical fabrication; optical modulation; quantum well lasers; surface emitting lasers; 850 nm; GaAs-AlGaAs; GaAs/AlGaAs quantum well; device performance; fabrication; high-speed modulation; intra-cavity contacted lasers; intra-cavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers; large-signal analysis; lateral current injection; multi-mode lasers; optical spectra measurements; power-current-voltage measurements; quantum well vertical cavity surface-emitting lasers; shallow implanted apertures; single-mode lasers; small-signal analysis; vertical-cavity surface-emitting lasers; Apertures; Dielectric substrates; Gallium arsenide; High speed optical techniques; Lasers and Electro-Optics Society; Mirrors; Optical devices; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947547
