Title :
Non-volatile resistive switching for advanced memory applications
Author :
Chen, An ; Haddad, Sameer ; Wu, Yi-Ching ; Fang, Tzu-Ning ; Lan, Zhida ; Avanzino, Steven ; Pangrle, Suzette ; Buynoski, Matthew ; Rathor, Manuj ; Cai, Wei ; Tripsas, Nick ; Bill, Colin ; VanBuskirk, M. ; Taguchi, Masao
Author_Institution :
Spansion LLC, Sunnyvale, CA
Abstract :
A non-volatile resistive switching mechanism based on trap-related space-charge-limited-conduction (SCLC) is proposed. Excellent memory characteristics have been demonstrated using near-stoichiometric cuprous oxide (CuxO) metal-insulator-metal (MIM) structures: low-power operation, fast switching speed, superior temperature characteristics, and long retention. This MIM memory cell is fully compatible with standard CMOS process. The proposed switching mechanism is a strong contender for high density and low cost memory applications
Keywords :
CMOS memory circuits; MIM structures; copper compounds; low-power electronics; random-access storage; CuO; MIM memory cell; advanced memory applications; metal-insulator-metal structures; near-stoichiometric cuprous oxide; nonvolatile resistive switching; standard CMOS process; trap-related space-charge-limited-conduction; CMOS process; Conducting materials; Copper; Costs; Ferroelectric materials; Metal-insulator structures; Nonvolatile memory; Organic materials; Research and development; Temperature;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609461
