• DocumentCode
    3444543
  • Title

    Silane-free PECVD silicon carbon nitride (SiCxNy) passivation and anti-reflection coatings for high efficiency silicon solar cells

  • Author

    Kang, M.H. ; Ebong, A. ; Rounsaville, B. ; Rohatgi, A. ; Hong, J.

  • Author_Institution
    Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    Industrialized silicon solar cells were fabricated using silane-free silicon carbon nitride (SiCxNy) film as an antireflection (AR) and surface passivation layer. Sixtron Advanced Materials has developed a gas generation system to deposit the dielectric film that uses a polymeric solid source. Sixtron eliminates the cost and hazards associated with storing and handling pyrophoric silane gas. The electrical and optical properties of the new AR coating layer are investigated and compared to the SiNx films coated with silane (SiH4) gas. We tuned the film properties using NH3 flow rate from previous work. In this work, we further optimized the film properties. As plasma power increases, interface trap density (Dit) and flat band charge (Qfb) are reduced while refractive index and extinction coefficient remain similar. Screen-printed 149cm2 Czochralski (CZ) Si solar cells with SiCxNy AR coating layer provides an energy conversion efficiency of 17.2%, which is comparable to that of conventional SiNx coated solar cells.
  • Keywords
    antireflection coatings; crystal growth from melt; dielectric thin films; elemental semiconductors; interface states; passivation; semiconductor thin films; silicon compounds; solar cells; Si-SiCxNy; Sixtron Advanced Materials; antireflection coatings; energy conversion efficiency; extinction coefficient; flat band charge; flow rate; interface trap density; plasma power; polymeric solid source; refractive index; screen-printed Czochralski solar cells; silane gas; silane-free PECVD silicon carbon nitride; silicon solar cells; surface passivation; Coatings; Dielectric materials; Optical films; Optical materials; Passivation; Photovoltaic cells; Semiconductor films; Silicon carbide; Silicon compounds; Textile industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411436
  • Filename
    5411436