Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

Author

Baek, I.G. ; Kim, D.C. ; Lee, M.J. ; Kim, H.-J. ; Yim, E.K. ; Lee, M.S. ; Lee, J.E. ; Ahn, S.E. ; Seo, S. ; Lee, J.H. ; Park, J.C. ; Cha, Y.K. ; Park, S.O. ; Kim, H.S. ; Yoo, I.K. ; Chung, U-In ; Moon, J.T. ; Ryu, B.I.

Author_Institution

Samsung Electron. Co., Ltd., Samsung Adv. Inst. of Technol., Kyeonggi

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

750

Lastpage

753

Abstract

Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application. Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions. With 2 additional masks, one layer of plug-BE included cross-point memory array could be added on top of another one. No signal of inter-layer interference has been observed. Also, prototype binary oxide based diodes have been fabricated for the purpose of suppressing intra-layer interference of cross-point memory array

Keywords

electrodes; logic gates; random-access storage; OxRRAM; active memory cell; binary oxide based diodes; inter-layer interference; intra-layer interference; multilayer cross-point binary oxide resistive memory; nonvolatile random access data storage; plug contact type bottom electrode; post-NAND storage application; CMOS technology; Consumer electronics; Electrodes; Electronic mail; Energy consumption; Memory; Moon; Plugs; Research and development; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609462

Filename

1609462