Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm

Author

Kund, Michael ; Beitel, Gerhard ; Pinnow, Cay-Uwe ; Röhr, Thomas ; Schumann, Jörg ; Symanczyk, Ralf ; Ufert, Klaus-Dieter ; Müller, Gerhard

Author_Institution

Infineon Technol. AG, Munich

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

754

Lastpage

757

Abstract

We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between an oxidizable anode and an inert cathode. Low power resistive switching operation, the large scalability potential including multi-level-capability (MLC) and the investigated reliability aspects, like retention at elevated temperature, operating temperature and endurance, make CBRAM a very promising non-volatile emerging memory technology

Keywords

anodes; cathodes; low-power electronics; random-access storage; conductive bridging RAM; inert cathode; nanoscale conductive bridging memory cells; nonvolatile memory; oxidizable anode; resistive switching operation; thin solid state electrolyte layer; Bridge circuits; Current measurement; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Scalability; Solid state circuits; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609463

Filename

1609463