85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

Author

Datta, S. ; Ashley, T. ; Brask, J. ; Buckle, L. ; Doczy, M. ; Emeny, M. ; Hayes, D. ; Hilton, K. ; Jefferies, R. ; Martin, T. ; Phillips, T.J. ; Wallis, D. ; Wilding, P. ; Chau, R.

Author_Institution

Components Res., Intel Corp., Hillsboro, OR

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

763

Lastpage

766

Abstract

We demonstrate for the first time 85nm gate length enhancement and depletion mode InSb quantum well transistors with unity gain cutoff frequency, f_T, of 305 GHz and 256 GHz, respectively, at 0.5V V_DS, suitable for high speed, very low power logic applications. The InSb transistors demonstrate 50% higher unity gain cutoff frequency, f_T, than silicon NMOS transistors while consuming 10 times less active power

Keywords

III-V semiconductors; indium compounds; logic circuits; low-power electronics; quantum well devices; 0.5 V; 256 GHz; 305 GHz; 85 nm; InSb; depletion mode; digital logic applications; gate length enhancement; quantum well transistors; silicon NMOS transistors; Cutoff frequency; Epitaxial layers; Etching; Gallium arsenide; Logic devices; MOSFETs; Manufacturing; Photonic band gap; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609466

Filename

1609466

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3444669