Title :
The InP/GaAsSb type-H heterostructure system and its application to high-speed DHBTs and photodetectors: physics, surprises, and opportunities (INVITED)
Author :
Bolognesi, C.R. ; Liu, H.G. ; Tao, N.G. ; Zheng, L. ; Zhang, X. ; Watkins, S.P.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC
Abstract :
The InP/GaAsSb/InP "type-II" heterostructure system is of interest for high-speed devices such as photodetectors and double heterostructure bipolar transistors (DHBTs) because its band alignment enables the straightforward injection of electrons from a ~0.72 eV p-type GaAsSb layer into n-type InP without any need for interface grading. We briefly review the salient features of the InP-GaAsSb system, and consider some of the surprising device characteristics encountered in InP/GaAsSb -based devices. In several respects, the InP/GaAsSb system is shown to offer very appealing opportunities for the development of high-speed NpN DHBTs with ultrathin base and collector layers
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; photodetectors; InP-GaAsSb; band alignment; double heterostructure bipolar transistors; electron injection; high-speed DHBT; interface grading; photodetectors; type-II heterostructure system; ultrathin base layers; ultrathin collector layers; Bipolar transistors; Double heterojunction bipolar transistors; Electron emission; Gallium arsenide; Indium phosphide; Laboratories; Photodetectors; Physics; Semiconductor devices; Superlattices;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609470
