The InP/GaAsSb type-H heterostructure system and its application to high-speed DHBTs and photodetectors: physics, surprises, and opportunities (INVITED)

Author

Bolognesi, C.R. ; Liu, H.G. ; Tao, N.G. ; Zheng, L. ; Zhang, X. ; Watkins, S.P.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

779

Lastpage

782

Abstract

The InP/GaAsSb/InP "type-II" heterostructure system is of interest for high-speed devices such as photodetectors and double heterostructure bipolar transistors (DHBTs) because its band alignment enables the straightforward injection of electrons from a ~0.72 eV p-type GaAsSb layer into n-type InP without any need for interface grading. We briefly review the salient features of the InP-GaAsSb system, and consider some of the surprising device characteristics encountered in InP/GaAsSb -based devices. In several respects, the InP/GaAsSb system is shown to offer very appealing opportunities for the development of high-speed NpN DHBTs with ultrathin base and collector layers

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; photodetectors; InP-GaAsSb; band alignment; double heterostructure bipolar transistors; electron injection; high-speed DHBT; interface grading; photodetectors; type-II heterostructure system; ultrathin base layers; ultrathin collector layers; Bipolar transistors; Double heterojunction bipolar transistors; Electron emission; Gallium arsenide; Indium phosphide; Laboratories; Photodetectors; Physics; Semiconductor devices; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609470

Filename

1609470