Non-uniform degradation behavior across device width in RF power GaAs PHEMTs

Author

Villanueva, A.A. ; del Alamo, J.A. ; Hisaka, T. ; Hayashi, K. ; Somerville, M.

Author_Institution

Massachusetts Inst. of Technol., Cambridge, MA

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

783

Lastpage

786

Abstract

We have studied the electrical degradation of RF power PHEMTs by means of light-emission measurements performed during bias-stress experiments. We show that electrical degradation can proceed in a highly non-uniform manner across the width of the device. We identify the origin of this as a small systematic non-uniformity in the recess geometry that impacts the electric field and the impact ionization rate on the drain of the device. Our research suggests that a close examination of the width distribution of electric field in RF power PHEMTs (and FETs in general) is essential to enhance their long-term reliability

Keywords

III-V semiconductors; gallium arsenide; impact ionisation; power HEMT; semiconductor device measurement; semiconductor device reliability; GaAs; RF power PHEMT; bias-stress experiments; electric field; electrical degradation; impact ionization rate; light-emission measurements; nonuniform degradation behavior; recess geometry; Degradation; Electric variables measurement; Gallium arsenide; Geometry; Nonuniform electric fields; PHEMTs; Performance evaluation; Power measurement; Radio frequency; Radiofrequency identification;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609471

Filename

1609471