DocumentCode
3444884
Title
Interfacial alloying and defect formation inside operational cigs solar cells
Author
Hetzer, M.J. ; Brillson, L.J. ; Jensen, D.G.
Author_Institution
Dept. of Phys., Ohio State Univ., Columbus, OH, USA
fYear
2009
fDate
7-12 June 2009
Abstract
Nanoscale depth-resolved and cross sectional cathodoluminescence spectroscopy (DRCLS) provides correlations of local electronic and chemical structure with actual solar cell performance in sets of copper indium gallium diselenide (CIGS)/CdS/ZnO/ITO thin film solar cells. Local cross sectional and depth-dependent results throughout the various layers within the solar cells reveal local spatial variations in the CIGS band structure, even within the same grain. Band structure correlations to the efficiency, open circuit voltage, short circuit current performance characteristics of individual solar cells show evidence for alloying or intermixing between the CdS and ZnO layers forming alloys with higher band gap energies and degraded performance. Also, higher ZnO/ITO band edge intensities correspond to higher short circuit currents.
Keywords
II-VI semiconductors; alloying; cadmium compounds; cathodoluminescence; chemical structure; copper compounds; energy gap; gallium compounds; indium compounds; interface states; interface structure; semiconductor thin films; short-circuit currents; solar cells; ternary semiconductors; thin film devices; vacancies (crystal); wide band gap semiconductors; zinc compounds; CuInGaSe2-CdS-ZnO-ITO; band edge intensities; band gap energies; band structure correlations; cross sectional cathodoluminescence spectroscopy; interfacial alloying; intermixing; local chemical structure; local electronic structure; nanoscale depth-resolved spectroscopy; open circuit voltage; short circuit current; thin film solar cells; vacancy energy; Alloying; Chemicals; Copper; Gallium compounds; Indium tin oxide; Photovoltaic cells; Short circuit currents; Spectroscopy; Thin film circuits; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411453
Filename
5411453
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