Lightweight, low cost InGaP/GaAs dual-junction solar cells on 100 mm epitaxial liftoff (ELO) wafers

Author

Tatavarti, Rao ; Hillier, G. ; Martin, G. ; Wibowo, A. ; Navaratnarajah, R. ; Tuminello, F. ; Hertkorn, D. ; Disabb, M. ; Youtsey, C. ; McCallum, D. ; Pan, N.

Author_Institution

MicroLink Devices Inc., Niles, IL, USA

fYear

2009

fDate

7-12 June 2009

Abstract

InGaP/GaAs dual junction (DJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO DJ cell wafers have total semiconductor thickness less than 5 Â¿m and weigh less than 1.7 g. The best solar cells exhibited an efficiency of 28.69% at one sun AM1.5D illumination, which is the highest reported efficiency for DJ ELO thin cells to date. The DJ ELO cells had fill factor (FF) >88%, open circuit voltage (Voc) of 2.32 V, and short circuit current density (Jsc) of 13.9 mA/cm². ELO DJ cells grown on reclaimed wafers show comparable performance to DJ cells grown on new substrates.

Keywords

III-V semiconductors; current density; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; solar cells; ELO DJ cell growth; InGaP-GaAs; dual-junction solar cells; epitaxial liftoff wafers; fill factor; open circuit voltage; short circuit current density; size 100 mm; sun AM1.5D illumination; Coatings; Costs; Gallium arsenide; III-V semiconductor materials; Optical reflection; Optical refraction; Optical surface waves; Photovoltaic cells; Ray tracing; Solar energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411455

Filename

5411455