Title :
Outdoor evaluation of crystalline and amorphous silicon technologies
Author :
Surendra, T.S. ; Rao, C.S. ; Das, G. Tulasi Ram
Author_Institution :
Dept. of Electr. & Electron. Eng., Dr. B.V. Raju Inst. of Technol., Narsapur, India
Abstract :
A study has been undertaken near Hyderabad, in the Southern part of India, to study/evaluate different Photovoltaic (PV) technologies. Four technologies were identified for field evaluation, namely mono-crystalline Silicon, poly-crystalline silicon, EFG (Edge defined film fed growth) silicon and amorphous silicon. PV modules of the above four technologies were obtained from a local manufacturer and subjected to long-term outdoor evaluation in three phases. Phase I involved the measurement of electrical parameters of the individual modules first and later of the PV arrays, configured from the modules of the respective technologies. In Phase II, the DC energy output measurements were done across the characteristic load resistances connected to the PV arrays of the four different technologies. This phase of testing was done during the pre-monsoon and post monsoon periods. The final Phase III test was conducted in conjunction with a suitably designed Data Acquisition System (DAS).
Keywords :
electrical resistivity; elemental semiconductors; photovoltaic cells; silicon; PV arrays; Si; amorphous silicon technology; crystalline silicon technology; data acquisition system; edge defined film fed growth; electrical parameters; load resistances; long-term outdoor evaluation; monocrystalline silicon; namely; photovoltaic technology; polycrystalline silicon; post monsoon period; pre-monsoon period; Amorphous silicon; Crystallization; Electric variables measurement; Electrical resistance measurement; Manufacturing; Phase measurement; Phased arrays; Photovoltaic systems; Semiconductor films; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411468