Damage-free neutral beam etching technology for high mobility FinFETs

Author

Endo, Kazuhiko ; Noda, Shuichi ; Masahara, Meishoku ; Kubota, Tomohiro ; Ozaki, Takuya ; Samukawa, Seiji ; Liu, Yongxun ; Ishii, Kenichi ; Ishikawa, Yuki ; Sugimata, Etsuro ; Matsukawa, Takashi ; Takashima, Hidenori ; Yamauchi, Hiromi ; Suzuki, Eiichi

Author_Institution

National Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

840

Lastpage

843

Abstract

Our newly developed neutral beam (NB) etching accomplished the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-fins for the first time. The fabricated FinFETs realized higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the NB etched atomically-flat surface. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication

Keywords

CMOS integrated circuits; MOSFET; etching; nanotechnology; atomically-flat surface; defect-free fabrication; high aspect rectangular Si-fins; high electron mobility; high mobility FinFET; nanoscale CMOS fabrication; neutral beam etching technology; smooth surface fabrication; Etching; Fabrication; FinFETs; Niobium; Oxidation; Plasma accelerators; Plasma applications; Plasma chemistry; Plasma immersion ion implantation; Pulse modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609487

Filename

1609487