DocumentCode
3445271
Title
Modular deep trench isolation scheme for 38 GHz self-aligned double polysilicon bipolar devices
Author
Bertagnolli, E. ; Ehinger, K. ; Klose, H. ; Weng, J. ; Hartwig, D.
Author_Institution
Siemens AG, Munich, Germany
fYear
1991
fDate
9-10 Sep 1991
Firstpage
25
Lastpage
28
Abstract
A modulator CMOS-compatible isolation scheme which is based on a deep trench technology combined with LOCOS is presented. In contrast to already established schemes, trench formation is postponed until after the LOCOS process. Thus thermal cycling is minimized. The high-performance potential of this isolation technology is demonstrated via fabrication of self-aligned double polysilicon transistors featuring a maximum cutoff frequency of 38 GHz
Keywords
bipolar integrated circuits; elemental semiconductors; integrated circuit technology; silicon; 38 GHz; LOCOS process; Si; deep trench isolation; double polysilicon bipolar devices; fabrication; maximum cutoff frequency; self-aligned; CMOS technology; Capacitance; Chemical technology; Cutoff frequency; Etching; Fabrication; Isolation technology; Oxidation; Research and development; Thermal loading;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-0103-X
Type
conf
DOI
10.1109/BIPOL.1991.160949
Filename
160949
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