Title :
Modular deep trench isolation scheme for 38 GHz self-aligned double polysilicon bipolar devices
Author :
Bertagnolli, E. ; Ehinger, K. ; Klose, H. ; Weng, J. ; Hartwig, D.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
A modulator CMOS-compatible isolation scheme which is based on a deep trench technology combined with LOCOS is presented. In contrast to already established schemes, trench formation is postponed until after the LOCOS process. Thus thermal cycling is minimized. The high-performance potential of this isolation technology is demonstrated via fabrication of self-aligned double polysilicon transistors featuring a maximum cutoff frequency of 38 GHz
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated circuit technology; silicon; 38 GHz; LOCOS process; Si; deep trench isolation; double polysilicon bipolar devices; fabrication; maximum cutoff frequency; self-aligned; CMOS technology; Capacitance; Chemical technology; Cutoff frequency; Etching; Fabrication; Isolation technology; Oxidation; Research and development; Thermal loading;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160949
