1.3 /spl mu/m InGaAsN VCSELs on GaAs substrates

Author

Klem, John F. ; Serkland, Darwin K. ; Blum, Oliver ; Geib, Kent M. ; Jackson, A.W. ; Naone, R.L. ; Dalberth, J.M. ; Smith, Johan

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

134

Lastpage

135

Abstract

Summary form only given. Commercial interest in developing inexpensive laser sources for 1.3 /spl mu/m has led to intense efforts to demonstrate GaAs-based vertical-cavity surface-emitting lasers (VCSELs) at that wavelength. To date, results include devices based on InGaAsN quantum wells, GaAsSb quantum wells and InAs quantum dots. Generally, these results have fallen short of demonstrating commercially useful devices due to relatively low output power, lack of high-temperature performance, or operation at wavelengths significantly shorter than desired. In this work, we report significant progress in improving the performance of InGaAsN quantum well VCSELs.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 1.3 micron; GaAs; InGaAsN; VCSEL; compositional grading; continuous-wave room-temperature lasing; distributed Bragg reflector mirror pairs; molecular beam epitaxy; quantum wells; Apertures; Differential amplifiers; Distributed Bragg reflectors; Gallium arsenide; Photodiodes; Pulse amplifiers; Quantum dot lasers; Timing jitter; Vertical cavity surface emitting lasers; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947599

Filename

947599