Novel transition layer engineered Si nanocrystal flash memory with MHSOS structure featuring large V/sub th/ window and fast P/E speed

Author

Joo, Kyong-Hee ; Wang, Xiofeng ; Han, Jeong Hee ; Lim, Seung-Hyun ; Baik, Seung-Jae ; Cha, Yong-Won ; Lee, Jin Wook ; Yeo, In-Seok ; Cha, Young-Kwan ; Yoo, In Kyeong ; Chung, U-In ; Moon, Joo Tae ; Ryu, Byung-Il

Author_Institution

Samsung Electron. Co. Ltd., Gyeonggi-Do

fYear

2005

fDate

5-5 Dec. 2005

Lastpage

868

Abstract

In this work, we propose a MHSOS (metal gate/high-k/SRO(silicon-rich oxide)/SiO₂/Si) structure showing large memory window (> 4V) with fast P/E speed (plusmn18 V, 200 mus). The erase speed is featuring faster than that of Si₃N₄ and has a retention time of 10 years for 10 % charge loss. These excellent properties were obtained through the modification of the transition layer between Si-NC and SiO₂ matrix in an SRO medium, as well as tunneling/blocking dielectric material optimization

Keywords

dielectric materials; flash memories; nanostructured materials; silicon compounds; tunnelling; 10 years; MHSOS structure; Si nanocrystal flash memory; Si-NC; Si₃N₄; SiO₂-Si; blocking dielectric material; fast P/E speed; metal gate/high-k/SRO(silicon-rich oxide)/SiO₂/Si; transition layer; tunneling; Annealing; Dielectric materials; Flash memory; MOSFETs; Microstructure; Moon; Nanocrystals; Nonvolatile memory; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609494

Filename

1609494