High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs

Author

Burns, S.G. ; Weber, R.J. ; Braymen, S.D.

Author_Institution

Microelectron. Res. Center, Iowa State Univ., Ames, IA, USA

fYear

1991

fDate

29-31 May 1991

Firstpage

207

Lastpage

211

Abstract

The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave f_T=2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the ⟨111⟩ crystal axes with the first-level Al metal serving as the etch stop. The resonator is used as the feedback element. Design techniques and suggestions for the novel circuit and system architectures using this technology are presented

Keywords

MMIC; aluminium compounds; bipolar integrated circuits; crystal resonators; micromechanical devices; oscillators; piezoelectric thin films; sputter deposition; sputter etching; thin film devices; 2.5 GHz; Al-AlN-Al; AlN resonators; BAW resonators; BAW thin-film piezoelectrics; L-band oscillators; RIE; UHF oscillators; anisotropic etch; bipolar junction transistors; high-Q resonators; microwave BJTs; microwave oscillators; reactive ion etching; thin film resonators; trench isolation; Aluminum nitride; Anisotropic magnetoresistance; Circuit synthesis; Feedback; Frequency; Microwave oscillators; Microwave transistors; Sputter etching; Sputtering; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control, 1991., Proceedings of the 45th Annual Symposium on

Conference_Location

Los Angeles, CA

Print_ISBN

0-87942-658-6

Type

conf

DOI

10.1109/FREQ.1991.145903

Filename

145903