Title :
Quality assured mass productive 1.6V operational 0.18 /spl mu/m 1T1C FRAM embedded smart card with advanced integration technologies against defectives
Author :
Kim, Kinam ; Kang, Y.M. ; Park, J.H. ; Joo, H.J. ; Kang, S.K. ; Choi, D.Y. ; Rhie, H.S. ; Koo, B.J. ; Lee, S.Y. ; Jeong, H.S. ; Kinam Kim
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Kyungki-Do
Abstract :
We have made great progress for mass production of a highly reliable 1.6V, 0.18 mum 1T1C FRAM embedded smart card. For mass production, our device has to pass standard qualification tests on the package level. These contain the infant life test (ILT), the high temperature operating life (HTOL), the endurance and the high temperature storage (HTS) test. Problems in the PZT capacitor integration scheme led to single bit fails during the standard ILT, HTOL and HTS tests. The causes are broken EBL and TE/PZT interface damage, which were removed by the modification of top electrode deposition and capacitor etching processes and by a new capping oxide deposition scheme
Keywords :
ferroelectric capacitors; ferroelectric storage; lead compounds; mass production; random-access storage; smart cards; sputter etching; titanium compounds; zirconium compounds; 0.18 micron; 1.6 V; 1T1C FRAM; HTOL; HTS test; ILT; PZT capacitor; Pb(ZrTi)O3; capacitor etching process; electrode deposition; embedded smart card; high temperature operating life; high temperature storage test; infant life test; integration technologies; mass production; quality assured mass productive; Capacitors; Ferroelectric films; High temperature superconductors; Life testing; Mass production; Nonvolatile memory; Packaging; Qualifications; Random access memory; Smart cards;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609495
