• DocumentCode
    3445392
  • Title

    Quality assured mass productive 1.6V operational 0.18 /spl mu/m 1T1C FRAM embedded smart card with advanced integration technologies against defectives

  • Author

    Kim, Kinam ; Kang, Y.M. ; Park, J.H. ; Joo, H.J. ; Kang, S.K. ; Choi, D.Y. ; Rhie, H.S. ; Koo, B.J. ; Lee, S.Y. ; Jeong, H.S. ; Kinam Kim

  • Author_Institution
    Memory Div., Samsung Electron. Co. Ltd., Kyungki-Do
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    869
  • Lastpage
    872
  • Abstract
    We have made great progress for mass production of a highly reliable 1.6V, 0.18 mum 1T1C FRAM embedded smart card. For mass production, our device has to pass standard qualification tests on the package level. These contain the infant life test (ILT), the high temperature operating life (HTOL), the endurance and the high temperature storage (HTS) test. Problems in the PZT capacitor integration scheme led to single bit fails during the standard ILT, HTOL and HTS tests. The causes are broken EBL and TE/PZT interface damage, which were removed by the modification of top electrode deposition and capacitor etching processes and by a new capping oxide deposition scheme
  • Keywords
    ferroelectric capacitors; ferroelectric storage; lead compounds; mass production; random-access storage; smart cards; sputter etching; titanium compounds; zirconium compounds; 0.18 micron; 1.6 V; 1T1C FRAM; HTOL; HTS test; ILT; PZT capacitor; Pb(ZrTi)O3; capacitor etching process; electrode deposition; embedded smart card; high temperature operating life; high temperature storage test; infant life test; integration technologies; mass production; quality assured mass productive; Capacitors; Ferroelectric films; High temperature superconductors; Life testing; Mass production; Nonvolatile memory; Packaging; Qualifications; Random access memory; Smart cards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609495
  • Filename
    1609495