Title :
Room temperature CW operation of GaAsSb/GaAs VCSELs near 1.3 /spl mu/m
Author :
Quochi, R. ; Cunningham, J.E. ; Kilper, D.C. ; Dinu, M. ; Shah, J.
Author_Institution :
Lucent Technol. Bell Labs, Holmdel, NJ, USA
Abstract :
Summary form only given. We report on the room temperature operation of optically pumped vertical-cavity surface-emitting lasers (VCSELs) based on GaAsSb/GaAs quantum wells (QWs). Continuous-wave (CW) operation with 200 /spl mu/W maximum output power at /spl cong/1.275 /spl mu/m, as well as quasi-CW operation up to 1.29 /spl mu/m, has been achieved. These are the first GaAsSb/GaAs QW VCSELs lasing near 1.3 /spl mu/m. The maximum output power approaches communication requirements.
Keywords :
III-V semiconductors; gallium arsenide; optical pumping; quantum well lasers; surface emitting lasers; 1.3 micron; 200 muW; GaAsSb-GaAs; high-speed optical communications; long-wavelength VCSEL; maximum output power; molecular-beam epitaxy; optically pumped VCSEL; quantum wells; quasi-CW operation; room temperature CW operation; Gallium arsenide; Laser excitation; Mirrors; Optical pumping; Power generation; Pump lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947601
