DocumentCode
3445434
Title
Temperature dependence of threshold current in a 1.3 /spl mu/m InGaAsN VCSEL: theory and experiment
Author
Schneider, H.C. ; Fischer, Arthur J. ; Chow, W.W. ; Klem, John F. ; Choquette, Kent D.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2001
fDate
11-11 May 2001
Firstpage
135
Lastpage
136
Abstract
Summary form only given. This paper describes an experimental and theoretical investigation of the dependence of threshold current on temperature for an InGaAsN/GaAs MQW VCSEL operating at 1.3 /spl mu/m and in the temperature range of 270 K to 350 K.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; surface emitting lasers; 1.3 /spl mu/m InGaAsN VCSEL; 1.3 micron; 270 to 350 K; InGaAsN-GaAs; InGaAsN/GaAs MQW VCSEL; temperature dependence; temperature range; threshold current; Gallium arsenide; Mirrors; Optical pumping; Power generation; Pump lasers; Stimulated emission; Surface emitting lasers; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-662-1
Type
conf
DOI
10.1109/CLEO.2001.947602
Filename
947602
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