Low-threshold optically pumped IV-VI quantum well vertical-cavity surface-emitting laser operating at /spl lambda/=4.45 /spl mu/m

Author

Shi, Z. ; Wu, H.Z. ; Khosravani, S. ; Xu, G. ; Bewley, W.W. ; Felix, C.L. ; Vurgaftman, I. ; Lindle, J.R. ; Meyer, J.R.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

136

Lastpage

137

Abstract

Summary form only given. We report pulsed emission from an IV-VI VCSEL whose active region consisted of eight PbSe(30 nm)/Pb/sub 0.97/Sr/sub 0.03/Se(25 nm) quantum wells. The substrate was [111] BaF/sub 2/, which has excellent thermal conductivity in comparison to PbSe.

Keywords

II-VI semiconductors; infrared sources; laser transitions; lead compounds; optical pumping; quantum well lasers; thermal conductivity; 4.45 micron; IV-VI VCSEL; PbSe-Pb/sub 0.97/Sr/sub 0.03/Se; PbSe/Pb/sub 0.97/Sr/sub 0.03/Se QW laser; QW VCSEL laser; active region; excellent thermal conductivity; low-threshold optically pumped IV-VI quantum well vertical-cavity surface-emitting laser; pulsed emission; Laser excitation; Optical pumping; Pump lasers; Quantum cascade lasers; Quantum well lasers; Resonance; Semiconductor laser arrays; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947604

Filename

947604