Title :
Low-threshold optically pumped IV-VI quantum well vertical-cavity surface-emitting laser operating at /spl lambda/=4.45 /spl mu/m
Author :
Shi, Z. ; Wu, H.Z. ; Khosravani, S. ; Xu, G. ; Bewley, W.W. ; Felix, C.L. ; Vurgaftman, I. ; Lindle, J.R. ; Meyer, J.R.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA
Abstract :
Summary form only given. We report pulsed emission from an IV-VI VCSEL whose active region consisted of eight PbSe(30 nm)/Pb/sub 0.97/Sr/sub 0.03/Se(25 nm) quantum wells. The substrate was [111] BaF/sub 2/, which has excellent thermal conductivity in comparison to PbSe.
Keywords :
II-VI semiconductors; infrared sources; laser transitions; lead compounds; optical pumping; quantum well lasers; thermal conductivity; 4.45 micron; IV-VI VCSEL; PbSe-Pb/sub 0.97/Sr/sub 0.03/Se; PbSe/Pb/sub 0.97/Sr/sub 0.03/Se QW laser; QW VCSEL laser; active region; excellent thermal conductivity; low-threshold optically pumped IV-VI quantum well vertical-cavity surface-emitting laser; pulsed emission; Laser excitation; Optical pumping; Pump lasers; Quantum cascade lasers; Quantum well lasers; Resonance; Semiconductor laser arrays; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947604
